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| EIC1010A-20 ISSUED 07/03/2007 10.00-10.25 GHz 20-Watt Internally Matched Power FET Excelics EIC1010A-20 .945 .803 .079 MIN .079 MIN FEATURES * * * * * * * 10.00- 10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.5 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 27% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 YYWW SN .315 .685 .617 .004 .168 .055 ALL DIMENSIONS IN INCHES .095 ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 10.00-10.25GHz VDS = 9 V, IDSQ 4000mA Gain at 1dB Compression f = 10.00-10.25GHz VDS = 9 V, IDSQ 4000mA Gain Flatness f = 10.00-10.25GHz VDS = 9 V, IDSQ 4000mA Power Added Efficiency at 1dB Compression VDS = 9 V, IDSQ 4000mA f = 10.00-10.25GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 2 Caution! ESD sensitive device. MIN 41.5 5.5 TYP 42.5 6.5 MAX UNITS dBm dB 0.5 27 5500 14000 -2.5 1.4 6500 18000 -4.0 1.6 o dB % mA mA V C/W f = 10.00-10.25GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 140 mA 2) Overall Rth depends on case mounting. Note: 1) Tested with 25 Ohm gate resistor. MAXIMUM RATING (Case Temperature 25 C) SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG Notes: CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature ABSOLUTE 15V -5V IDSS 3000mA 42.5 dBm 110W 175C 1 CONTINUOUS 10 V -3.0 V 9400mA 500 mA 2 @ 3dB compression 94 W 175C -65C ~ 175C -65C ~ 175C 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised July 2007 EIC1010A-20 ISSUED 07/03/2007 10.00-10.25 GHz 20-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised July 2007 |
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